Appeal No. 96-1075
Application 08/041,737
from each other on the substrate instead of on top of each
other as taught by Aoki and Sunami, e.g., EA16, lines 5-7,
responding to Appellants' arguments that "formed on the
substrate" does not include vertically arranged layers.
These statements are inconsistent with the teachings of the
references. Both Aoki and Sunami show the superconductor on
top of the semiconductor since the semiconductor is formed
in the silicon substrate. The reason for the silicon oxide
layer 17 in Aoki and the isolation films 3 in Sunami is to
separate the superconductor on top of the semiconductor.
Sunami teaches using a barrier layer only when the
superconductor overlies the semiconductor, not when the
superconductor region is distinct from the semiconductor
region, which is Appellants' disclosed invention. Thus, we
interpret the Examiner's rejection as requiring stacking the
superconductor on the semiconductor in Calviello. This is
consistent with other statements, such as (EA16): "Even if
the high temperature superconductor layer 110 or 120 of
Calviello et al. is atop the active semiconductor layer 108
or 124, both layers are still formed on the same ceramic
substrate."
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