Appeal No. 96-1075
Application 08/041,737
a barrier layer resistant to diffusion of dopants
and traps on top of said semiconductor region; and
a superconductor region formed on said substrate,
said superconductor region comprising a first
superconducting material.
The examiner relies on the following prior art:
U.S. Patents
Gurvitch et al. (Gurvitch) 4,837,609 June 6,
1989
Calviello et al. (Calviello) 5,164,359 November
17, 1992
Yamazaki 5,212,150 May 18,
1993
(filed February 16,
1990)
Sunami et al. (Sunami) 5,266,815 November 30,
1993
(filed April 6,
1992)
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