Appeal No. 96-1075
Application 08/041,737
region. The "resistant to diffusion of dopants or traps"
limitation simply recites a property or capability of the
"barrier layer" material. To indicate how broad claim 52
is, claim 52 would be met by adding a passivation layer of
silicon nitride on top of the semiconductor and HTS regions
in Calviello as shown at 14 in Aoki; however, this rejection
is not before us.
Third, the limitations of "a semiconductor region
formed on said substrate" and "a superconductor region
formed on said substrate" exclude forming the semiconductor
in bulk silicon. However, the "formed on" limitation does
not require the semiconductor or the superconductor to be
formed directly on the substrate. As indicated by claim 53,
for example, a buffer layer may be interposed between the
substrate and superconducting material. In view of this, we
agree with the Examiner that "formed on said substrate" does
not require the semiconductor region and the superconductor
region to be formed on distinct separate areas of the
substrate, but broadly admits of the interpretation that the
superconductor lies atop the semiconductor. Appellants'
arguments in support of the argument that "the reasonable
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