Appeal No. 96-3105
Application 08/135,003
DECISION ON APPEAL
This is a decision on appeal under 35 U.S.C. § 134 from
the final rejection of claims 1-3, 5-19, and 30-36.
We reverse.
BACKGROUND
The disclosed invention is directed to a field effect
transistor (FET) device wherein part of the channel near the
source region is graded by varying the composition in a linear
fashion (see region 62 of the channel in figure 4). This
creates a built-in quasi-electric field in the near source
region that accelerates charge carriers entering the channel
region from the source to velocity saturation. "The velocity
saturated hot carriers can travel the channel region
ballistically and reduce the channel transit time resulting in
faster switching." (Specification, page 20, lines 28-30, as
amended.)
Claim 1 is reproduced below.
1. A FET device, comprising:
a source region;
a drain region;
a channel region interconnecting said source region
and said drain region, and provided under a gate;
- 2 -
Page: Previous 1 2 3 4 5 6 7 8 9 10 Next
Last modified: November 3, 2007