Appeal No. 96-3105
Application 08/135,003
drain." In view of appellants' later arguments that Wieder is
graded transverse to the direction of the channel, (i.e., in a
vertical direction), we presume this argument is made
assuming, arguendo, that the source in Wieder is graded in the
horizontal direction. We are not convinced that grading of
the source could not improve charge carrier flow. It is
known, for example, that the graded-base region of bipolar
transistors creates an electric field that aids the motion of
the charge carriers. See S.M. Sze, Semiconductor Devices
Physics and Technology, (John Wiley & Sons, 1985),
pages 124-25 (copy attached).
Appellants argue that the examiner errs in finding that
Wieder is concerned with switching speed and the improved
acceleration of charge carriers in the channel region (Br6,
Br7-8, argument ii). We agree. Wieder discloses that
"inversion mode operation between heterojunction contacts
through a p-type ternary alloy epilayer permits faster
electron transit" (col. 1, lines 24-26) and "[t]he reasons for
using an inversion mode transistor based on the ternary alloy
. . . intend to take full advantage of the specific high
electron velocity of the Ga In As" (col. 4, lines 1-6). The
0.470.53
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