Appeal No. 96-3105
Application 08/135,003
said channel region comprising adjacent said source
region a first portion having at least one of a higher
bandgap energy and a lower electron affinity than a
second portion extending between said first portion to
said drain region, whereby
a quasi-electric field in said channel region near
said source region is created in order to accelerate
charge carriers and increase switching speed.
The examiner relies on appellants' admitted prior art in
figures 1-3 and the following prior art references:
Wieder et al. (Wieder) 4,468,851 September 4, 1984
Saunier et al. (Saunier) 4,558,337 December 10, 1985
Claims 1-3, 5-19, 30, 31, and 35-37 stand rejected under
35 U.S.C. § 103 as being unpatentable over the admitted prior
art in appellants' figures 1-3 and Wieder.
Claims 20-29 and 32-34 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over the admitted prior art in
appellants' figures 1-3 and Wieder, further in view of
Saunier.
We refer to the Final Rejection (Paper No. 6) and the
Examiner's Answer (Paper No. 14) (pages referred to as "EA__")
for a statement of the examiner's position and to the Appeal
Brief (Paper No. 13) (pages referred to as "Br__") for a
statement of appellants' arguments thereagainst.
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