Appeal No. 96-3105
Application 08/135,003
high electron velocity is due to the ternary alloy, not to any
charge acceleration from the source. An important feature is
providing heterojunction source and drain contacts (e.g.,
col. 1, lines 63-66). It can be seen that the benefits in
Wieder are achieved with both non-graded (col. 2, line 60 to
col. 3, line 13) and graded (col. 3, lines 14-32)
heterojunction source and drain contacts. Therefore, we find
no indication that grading of the source in Wieder is intended
to improve the flow of charge carriers.
Appellants argue that the examiner errs in finding that
Wieder results in a grading of the source in the direction of
the channel instead of perpendicular to the direction of
charge carrier flow in the channel (Br6-7, Br8-9, argument
iii). The examiner states (EA4-5):
Particularly, Wieder provides in column 3 for an InGaAs
channel 12 and a graded source region comprising for
example a diffused region of GaInAsP into the InP
substrate wherein there resides a higher concentration of
P away from the source/channel junction than near the
source/channel junction (since P is diffused from the [?]
as taught in column 3, lines 19-21). Further as taught
in column 3 lines 58-63, the source/drain is taught to be
lattice matched and of a larger bandgap than the channel.
Thus the structure results in Wieder's only Figure which
is the same as Appellant's claim 1. See Examiner's
graphical Interpretation of Wieder, attached.
We agree with appellants' interpretation of Wieder.
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