Appeal No. 96-3700
Application 08/306,795
This is a decision on appeal from the final rejec-
tion of claims 1 through 16, all of the claims pending in the
present application. In an amendment filed after the final
rejection and entered by the Examiner, claims 1 through 11
have been canceled.
The invention relates to a bipolar transistor having
a plurality of coupled delta doped layers in the emitter,
collector and base regions. More particularly, on page 6 of
the specifi-cation, Appellants disclose that Figure 5 shows a
bipolar transistor structure having delta layers which extend
into the emitter 16 and into the collector 12.
The independent claim 12 is reproduced as follows:
12. A bipolar transistor comprising
semiconductor body,
a first region in said semiconductor body of a first
conductivity type and forming an emitter region,
a second region in said semiconductor body of said
first conductivity type spaced from said first region and
forming a collector region,
a third region in said semiconductor body between
said first region and said second region and forming a base
region, said third region including a plurality of delta-doped
layers of a second conductivity type, said delta-doped layers
being spaced to allow coupling between delta-doped layers for
2
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