Appeal No. 96-3700
Application 08/306,795
lateral transport along with the advantage of a compensated
well structure resulting from extending the delta-doped layers
into the emitter and collector. We note that Appellants'
claim 12 recites these limitations. In particular, Appel-
lants' claim 12 recites:
a first region . . . forming an emitter
region, a second region . . . forming a
collector region, a third region in said
semiconductor body between said first re-
gion
and said second region and forming a base
region, said third region including a plu-
rality of delta-doped layers . . . ,
. . . said delta-doped layers extending
into the emitter region and into said col-
lector region.
Therefore, we find that Appellants' claim 12 requires that the
delta-doped layers are in a base region which is in between
the emitter region and collector region and the delta-doped
layers extend into the emitter region and into the collector
region.
The Examiner argues on pages 3 and 4 of the answer
that it would have been obvious to those skilled in the art to
modify the Levi structure of only having the delta-doped layer
in the base region to include the delta-doped layers in the
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