Appeal No. 96-3700
Application 08/306,795
emitter and collector regions in view of Chiu's teaching of
using delta-doped layers for rendering efficient contact
structures. The Examiner further states on pages 4 and 5 that
the "Examiner sees no patentable distinction in the claim
language since the references clearly provide for delta-doped
layers in the base, emitter and collector of a bipolar de-
vice."
Upon a careful review of Levi, Kuo and Chiu, we find
that none of the references teaches that the delta-doped
layers are in a base region which is in between the emitter
region and collector region and the delta-doped layers extend
into the
emitter region and into the collector region as recited in
Appellants' claim 12. We agree with the Examiner that Levi
teaches in column 4 a base having a delta-doped structure.
Furthermore, Kuo does teach on page 262 a bipolar transistor
in
which the base is delta doped. However, neither Levi nor Kuo
teaches or suggests that the delta-doped structure is to
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