Appeal No. 96-3700
Application 08/306,795
enhanced mobility and conductivity in a lateral direction of
said base region parallel to said first and third regions,
said delta-doped layers extending into the emitter
region and into said collector region.
The Examiner relies on the following references:
Levi 4,926,221 May 15, 1990
Chiu et al. (Chiu) 5,013,685 May 7, 1991
Kuo et al. (Kuo), "Planarized Be *-Doped Heterostructure
Bipolar Transistor Fabricated Using Doping Selective Contact
and Selective Hole Epitaxy," 30 Japanese Journal of Applied
Physics, no. 2B, L262-L265 (February 1991).
Claims 12 through 16 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Levi, Kuo and Chiu.
Rather than reiterate the arguments of Appellants
and the Examiner, reference is made to the brief and answer
for the respective details thereof.
OPINION
We will not sustain the rejection of claims 12
through 16 under 35 U.S.C. § 103.
The Examiner has failed to set forth a prima facie
case. It is the burden of the Examiner to establish why one
having ordinary skill in the art would have been led to the
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