Appeal No. 96-4052
Application 08/198,511
creating charge holes in selected regions of said
surface of said second semiconductor layer to promote
etching of said selected regions to form said
semiconductor, whereby said etching automatically stops
when regions of said first semiconductor layer under said
selected regions become exposed.
The examiner relies on appellants' admission that alpha
silicon carbide ("-SiC) and beta silicon carbide ($-SiC) were
known (specification, page 5, lines 8-11) and that titanium
contacts on SiC were known (specification, page 14,
lines 20-25) and on the following prior art references:
Chang 3,078,219 February 19,
1963
Kohl et al. (Kohl) 4,369,099 January 18,
1983
Forrest et al. (Forrest) 4,414,066 November 8,
1983
Ajika et al. (Ajika) 5,049,975 September 17,
1991
Steitz et al. (Steitz) 5,182,420 January 26,
1993
(filed April 9,
1990)
Claims 31, 33-35, 39-46, 48, and 49 stand rejected under
35 U.S.C. § 103 as being unpatentable over Forrest, Kohl,
Chang, and the admission that "-SiC and $-SiC were known.
Claims 31, 33-46, 48, and 49 stand rejected under
35 U.S.C. § 103 as being unpatentable over Forrest, Kohl,
Chang, and the admission that "-SiC and $-SiC were known,
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