Appeal No. 1997-0166
Application No. 08/409,933
added SiO around the bump is that shorting between the TAB lead and the chip end is avoided, and
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circuits in the chip can be protected with favorable moisture resistance.” The remainder of the silicon
chip (1) of Yabe is covered with a film (3) of silicon nitride or SiO . We now turn to Merrin, who
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discloses (col, 5, lines 1 through 15) that subsequent to the application of the aluminum lands (18), a
layer of glass (19) is deposited over the chip (15) to provide environmental protection. Holes are then
etched in the glass (19) over the lands to expose them for metallization. Layers of chromium (21),
copper (22) and gold (23) are deposited to provide desired electrical contact to the aluminum lands
(18). Chromium deposit (21) establishes an excellent glass to metal seal and ensures environmental
protection of the contact area. The copper (22) and gold (23) deposits permit metals to be adhered to
chromium sealing film (21). From the teachings of Merrin and Yabe, we conclude that it would have
been obvious to one of ordinary skill in the art to have provided the bump electrode (4) of Yabe with a
metal layer in contact with the bump electrode as taught by Merrin. One of ordinary skill in the art
would have been taught to make this modification because the chromium layer would provide a better
contact between the SiO powder in the polyimide layer (5) and the bump electrode (4). In addition,
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the copper and gold deposits on the chromium layer would provide a better electrical contact with the
bump electrode. In providing a metal layer around the bump electrode (4) of Yabe, the metal layer
would be in contact with the aluminum layer on which the electrode is placed.
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