Appeal No. 1997-0166
Application No. 08/409,933
Appellants further assert that the references do not disclose or suggest the claimed bump
electrode projection distance. The examiner takes the position (answer, page 3) that “resin film (5) has
a thickness of +0 to -10 microns in [sic: with] respect to the height of the bump electrode.” Appellants'
position (reply brief, page 6) is that although Yabe discloses film having a thickness of +0 to -10µm
with respect to the height of the bump electrode, the reference lacks any mention of projecting a bump
electrode above a top surface of the resin film to reduce heat induced defects and absorb pressure.
Claims 17 and 21 require that the bump electrode project a distance above a top surface of the resin
film, with the projection distance reducing heat induced defects and absorbing pressure exerted on a
top area of a bump electrode to suppress the occurrence of cracks in the resin film. Yabe’s invention is
directed to (translation, pages 2 and 3) the structure of a protective film on the surface of a
semiconductor device which is mounted by a TAB format. Yabe states (translation, page 3) that
conventionally, surface protective film structures involve forming a thin, 2-5µm polyimide film over the
whole surface of a semiconductor chip. According to Yabe, the drawback of this construction is that
the surface protective film is too thin. As a result, the TAB lead and the chip end come into contact,
and shorting occurs. To resolve this problem, Yabe makes the polyimide first surface protective film
(5) 18µm in thickness (translation, page 4). In addition, Yabe (translation, page 4) provides the
polyimide film (5) at a thickness of +0 ~ -10 µm relative to the height of the bump electrode (4). As
Yabe teaches making the the polyimide film (5) at a thickness of +0 ~ -10 µm relative to the height of
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