Appeal No. 1997-1695
Application No. 08/496,121
rejection filed
December 19, 1996 which amended claim 10 was also entered by
the Examiner. In the final rejection dated March 7, 1996, the
Examiner indicted the allowability of claims 7, 9, 17, 18, and
28 through 31 subject to the overcoming of a 35 U.S.C. § 112,
second paragraph, rejection. As a result of the amendments
after final, the Examiner withdrew the 35 U.S.C. § 112,
second paragraph, rejection and, accordingly, the rejection of
claims 1 through 6, 8, 10, 12, 13, 15, 16, 19 through 22, and
25 through 27 is before us on appeal.
The claimed invention relates to a boosted potential
generating circuit in which a P-channel MOS drive transistor
is provided between a first node and a boosted potential node.
More particularly, Appellant indicates at pages 14 through 16
of the specification that potential generating circuits
provide first and second signals having a precharge potential
level and a potential level higher than the precharge
potential. These signal are applied to first and second nodes
with the applied signals being opposite in phase.
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