Appeal No. 1997-3441
Application No. 08/614,920
of Appellants’ described fabricating steps are standard
processing steps in silicon-based technology, there is no
enabling disclosure for implementation of these processing steps
using silicon carbide (SiC) material.
After careful review of the arguments of record, however,
we are in agreement with Appellants’ position as stated in the
Briefs. As pointed out by Appellants (Brief, pages 6 and 7),
the specification describes the details of the fabrication of
the first and second SiC layers (pages 4 and 10), the production
of the heavily doped ion-implantation regions of the same
conductivity type as the second SiC layer to form the claimed
MOSFET and resistor electrodes (pages 5 and 6), as well as the
tailoring of the resistor values to accommodate the temperature
coefficient characteristics of SiC material (page 10). To
further buttress Appellants’ contention as to the enabling
nature of the disclosure, we point to the Kurtz and Takasu
references, cited by the Examiner as part of the obviousness
rejection, as further evidence that skilled artisans were able
to fabricate integrated circuits of SiC material at the time of
filing of Appellants’ application. In our view, the present
disclosure is of sufficient detail so as to enable one of
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