Appeal No. 1997-3695
Application No. 08/097,526
defined masking. As disclosed on page 6 of the specification
and Figs. 1 through 11, a thin conformal silicon dioxide glass
layer 38 is formed over a patterned resist layer 36 having
vertical sidewalls. An epitaxy mask is formed of the vertical
sidewall portions of the glass layer after the horizontal
portions of the glass layer and the resist are removed. The
width of the epitaxy mask is the same as the thickness of the
glass layer which allows selective epitaxy deposition on the
exposed portions of the substrate defining gaps with smaller
feature size than those achieved by an etching process.
Additionally, Appellants on page 8 of the specification point
out that after forming the laterally segmented epitaxial
layers, the epitaxy mask is removed and a tunneling barrier
layer is formed to fill the gaps left by the epitaxy mask.
Representative independent claim 1 is reproduced as
follows:
1. A method of fabricating a quantum well
device, said method comprising:
forming an epitaxy mask by sidewall defined
masking; and
forming one or more quantized regions by
selective deposition of one or more epitaxial
layers.
2
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