Appeal No. 1997-3695
Application No. 08/097,526
gap between the adjacent quantum well structures. Nishida on
pages 8 and 9 teaches that an opening for the quantum device
formation is etched in dielectric mask layer 12 using a
photoresist mask. Nishida does not provide any teachings
related to the separation of adjacent quantum device regions
using a sidewall defined epitaxy mask. Galeuchet on page
2423, second col. and Fig. 1(b) discloses an array of 280 nm
wide and 600 nm apart quantum dots which are selectively
deposited in openings etched in an epitaxy mask layer.
Turning to Johnson, we note that a sidewall mask for etching
the gate layer is used to form a submicron gate structure.
Johnson on page 4588 and Figs. 6 and 7 further teaches that
sidewall mask 20 defines small gate feature in the underlying
polysilicon layer 14 during an etch process. We further find
that Randall teaches the formation of two quantum dot diodes
for studying their operation under local electric field.
Randall does not disclose any selective epitaxial deposition
methods using an of epitaxy mask for forming the diode pair.
Specifically, Randall on page 2894, section III. and Fig. 3
teaches that a diode pair is manufactured using self-aligned
metal masking and etching techniques that leave small features
9
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 Next
Last modified: November 3, 2007