Appeal No. 1997-3695
Application No. 08/097,526
The Examiner relies on the following references:
Nishida et al. (Nishida) 05-144732
Jun. 11, 1993
(Japanese)
Johnson, Jr., C., et al., “Method for Making Submicron
Dimensions in Structures Using Sidewall Image Transfer
Techniques.” IBM Technical Disclosure Bulletin, Vol. 26, No. 9,
pp. 4587-89
(Feb. 1984).
Galeuchet, Y.D., et al., "In situ GalnAs/Inp quantum dot arrays
by selective area metalorganic vapor phase epitaxy." Applied
Physics Letters 58(21), pp. 2423-25 (May 27, 1991).
Randall, J.N., et al., "Electric field coupling to quantum dot
diodes." Journal of Vacuum Science and Technology, B9(6)
pp. 2893-97 (Nov./Dec. 1991).
Claims 1 through 3 stand rejected under 35 U.S.C. § 103
as being obvious over Nishida, Galeuchet, Johnson, and
Randall.
Rather than repeat the arguments of Appellants and the
Examiner, reference is made to the brief and the answer for
the details thereof.
OPINION
After careful review of the evidence before us, we do not
agree with the Examiner that claims 1 through 3 are properly
rejected under 35 U.S.C. § 103. Accordingly, we reverse.
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