Appeal No. 1997-3730
Application No. 08/095,147
amendment after final rejection filed April 10, 1995, was
denied entry by the Examiner.1
The claimed invention relates to a device for reducing
plasma etch damage occurring within a sputter etch chamber as
a result of undesirable charge transfer or arcing between the
chamber anode and a semiconductor wafer surface. More
particularly, a diode which acts to prevent undesirable charge
transfer is formed within an inactive region of the wafer in
registry with the wafer coupling retainer. In a further
embodiment, instead of being placed on the wafer, a charge
transfer prevention diode is placed between the sputter etch
anode plate and a ground terminal.
Claim 1 is illustrative of the invention and reads as
follows:
1. A device for reducing plasma etch damage occurring within
a sputter etch chamber, comprising:
1The amendment after final rejection proposed entry of
new claims 21 to 25. In an Advisory Action mailed April 20,
1995, the Examiner indicted substantive reasons for denying
entry of the amendment although the box in item 3 on Form PTOL
303 indicating entry of the amendment was apparently
inadvertently checked. Appellants’ May 12, 1995, response to
the Advisory Action verifies Appellants’ understanding that
the amendment after final was not to be entered and that only
claims 1 to 14 are the subject of this appeal.
2
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