Appeal No. 1997-3730
Application No. 08/095,147
an anode spaced from a retainer of a sputter etch
chamber;
said retainer retaining a semiconductor wafer having an
inactive region and an active region;
at least one diode formed within said inactive region of
said wafer near the outer periphery of said wafer;
and
said diode is capable of electrical connection to said
retainer.
The Examiner relies on the following prior art:
Dean et al. (Dean) 4,473,455 Sep. 25,
1984
Tai et al. (Tai) 4,496,448 Jan. 29,
1985
Harrington, III (Harrington) 4,943,537 Jul.
24, 1990
Lee et al. (Lee) 5,292,399 Mar. 08,
1994
(Filed Jan. 08, 1992)
Singer, Peter H., “Evaluating Plasma Etch Damage,”
Semiconductor International, pp. 78-81 (May 1992).
Claims 1 to 14 stand finally rejected under 35 U.S.C. §
103. As evidence of obviousness, the Examiner offers Singer
in view of Harrington and Lee with respect to claims 1 to 5,
adding Dean to the basic combination with respect to claim 6,
and adding Tai to the basic combination with respect to claims
7 to 14.
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