Appeal No. 1998-0343
Application 08/439,209
The disclosed invention pertains to an arrangement of
components to form a nonvolatile memory structure.
Representative claim 4 is reproduced as follows:
4. A nonvolatile memory structure for storing a
plurality of bits of data comprising:
a semiconductor substrate;
a first doped region and a second doped region, wherein
the first and second doped regions lie within the substrate
and are spaced apart from each other;
a channel region lying within the substrate and between
the first and second doped regions;
a first gate dielectric layer overlying the substrate;
a first floating gate and a second floating gate
overlying the substrate, wherein the first and second floating
gates:
are spaced-apart from each other; and
each of the first and second floating gates does not
extend across all of the channel region in any direction;
an intergate dielectric layer overlying the first and
second floating gates;
a first conductive member and a second conductive member,
wherein:
the first conductive member lies adjacent to the first
floating gate and overlies a first portion of the channel
region that is not covered by the first or second floating
gates;
2
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