Appeal No. 1998-0343
Application 08/439,209
between the source and drain regions as the width dimension,
it is clear that the floating gates 22B and 20B of Ma do not
extend across all of channel region 22 in the width direction.
The remaining length or vertical direction, as referred to by
appellant, can best be seen in Figure 2B of Ma. We note that
source and drain regions 22A and 20A in that figure are shown
as rectangles which extend vertically beyond the floating
gates in both directions. Since we view the channel region as
defined by the length and width of the source and drain
regions, we agree with the examiner that Ma’s floating gates
do not extend across all of the channel region in any
direction.
With respect to appellant’s second argument, we again
agree with the examiner. We decline to interpret the claimed
invention directed to a memory structure as limited to a
memory cell structure. Although Ma’s cell structure has only
three transistors and appellant’s cell structure has five
transistors, we agree with the examiner that the claimed
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