Appeal No. 1998-0343
Application 08/439,209
memory structure can be read on the plurality of cells
disclosed by Ma. The array of memory cell structures shown in
Figure 3 of Ma has conductive members for forming control
gates for four transistors consistent with the language of
claim 4. Appellant’s argument regarding Ma’s use of
“structure” in the singular or plural is irrelevant because Ma
is describing a cell structure and a plurality of such cell
structures form a memory structure.
Since we do not find either of appellant’s arguments to
be persuasive of error in the rejection of independent claims
4 and 23, we sustain the rejection of these independent claims
as anticipated by the disclosure of Ma. Since appellant has
not separately argued the patentability of dependent claims 5,
8, 9, 16, 17, 19, 24-31 and 33, these claims fall with
independent claims 4 and 23.
Appellant argues dependent claim 6 separately [Brief,
page 6]. Appellant’s only argument is that Ma does not
disclose different gate dielectric thicknesses. The examiner
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