Appeal No. 1998-0343
Application 08/439,209
the first conductive member is a gate for a first
transistor and a control gate for a second transistor;
the second conductive member lies adjacent to the second
floating gate and overlies a second portion of the channel
region that is not covered by the first or second floating
gates; and
the second conductive member is a control gate for a
third transistor and a gate for a fourth transistor; and
the first and second conductive members are spaced apart
from each other; and
a third conductive member overlying a third portion of
the channel region that lies between the first and second
conductive members, wherein the third conductive member is a
select gate for the memory structure.
The examiner relies on the following reference:
Ma et al. (Ma) 5,278,439 Jan. 11, 1994
(filed Aug. 29, 1991)
Claims 4-6, 8, 9, 16-25, and 28-33 stand rejected under
35 U.S.C. § 102(a) as being anticipated by the disclosure of
Ma. We note that claims 20-22 depend from claim 1 which has
been allowed by the examiner. Therefore, the rejection of
these claims based upon the disclosure of Ma is clearly
inappropriate. Rather than repeat the arguments of
appellant or the examiner, we make reference to the brief and
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