Appeal No. 1998-1615
Application 08/548,928
8. A process for producing a device structure for real-time testing of silicon doping, comprising:
forming a device on a silicon wafer which includes at least one contact,
depositing an oxide layer on the thus formed device,
depositing an overlayer of laser light reflective material on the oxide layer,
patterning the layer of laser light reflective material to form openings in at least the underlying
silicon regions to be doped, and
doping the silicon regions, and
annealing the thus doped silicon regions using pulsed laser energy.
17. A process for improving silicon doping test structures, including:
providing an undoped silicon device having at least one ohmic contact therein having an
aluminum surface;
depositing an oxide layer over the silicon device;
depositing an aluminum overlayer on the oxide layer,
patterning the overlayer to open up holes to the at least one contact and to critical silicon
regions to be doped; and
doping and annealing the silicon regions.
The references relied upon by the examiner are:
Sasaki 4,646,426 Mar. 3, 1987
Ishida et al. (Ishida) 5,316,969 May 31, 1994
The following rejections are at issue in this appeal:
(1) Claims 1-5 and 17 are rejected under 35 U.S.C. § 102(b) as being anticipated by
Sasaki.
(2) Claims 6-16, 18 and 19 are rejected under 35 U.S.C. § 103 as being unpatentable
over Sasaki and Ishida.
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