Appeal No. 1998-1615
Application 08/548,928
layer 12 by a conventional vapor depositing method;
(4) Selectively removing the aluminum layer by a photoetching method to form a gate
electrode 14;
(5) Introducing donor impurities into the silicon substrate 11 through the gate insulating
layer 13 by a conventional ion-implantation method to form doped regions 15 and 16;
(6) Annealing the doped regions 15 and 16 with a laser beam;
(7) Forming an insulating layer 17 of, for example, phosphosilicate glass, by a conventional
chemical vapor deposition method;
(8) Selectively etching the insulating layer 17 and the gate insulating layer 13 by a
photoetching method to form contact holes on the doped regions 15 and 16 and on the gate electrode
14;
(9) Forming a conductive layer of, for example, aluminum, on the insulating layer 17 by a
vapor deposition method; and
(10) Patterning the conductive layer by a photoetching method to form interconnection lines
for drain, gate and source 18a, 18b and 18c.
Ishida discloses a method for forming shallow junctions in semiconductor devices using gas
immersion laser doping. Specifically, the method includes the following steps:
(1) masking the surface of a semiconductor wafer with a reflective material such as
aluminum;
(2) immersing the semiconductor wafer in an atmosphere containing a dopant; and
(3) irradiating the semiconductor wafer with a laser beam.
Appellant argues that "Sasaki is totally devoid of any teaching relating to a silicon doping test
4
Page: Previous 1 2 3 4 5 6 7 Next
Last modified: November 3, 2007