Appeal No. 1998-1615
Application 08/548,928
Discussion
The claims on appeal are directed to a method for producing a silicon doping test structure.
Claim 1 recites an improvement in a method for making a silicon doping test structure having at least
one contact which comprises the step of providing a patterned overlayer of a laser light reflective
material having holes in alignment with the contact and with regions of the silicon to be doped. The
processes of claims 8 and 17 include the steps of providing an undoped silicon device having at least
one contact, depositing an oxide layer on the silicon device, depositing a laser light reflective material
overlayer on the oxide layer, and patterning the overlayer to form openings in at least the underlying
silicon regions to be doped. According to appellant, the silicon doping test structure monitors
uniformity during silicon doping, provides means for determining uniformity of both junction depth and
impurity dose in a silicon wafer, and enables measurement, in real time, of the active impurity dose and
junction depth of doped junctions. See Specification, p. 2.
Sasaki discloses a method for producing a MOS FET type semiconductor device comprising
the following steps (col. 3, line 9-col. 4, line 36; Figures 2 and 3):
(1) Oxidizing a silicon semiconductor substrate 11 by a conventional thermal oxidation
method using a silicon nitride layer mask to form a field insulating layer 12 of silicon dioxide;
(2) Removing the mask and oxidizing the silicon substrate 11 by the conventional thermal
oxidation method to form a gate insulating layer 13 of silicon dioxide;
(3) Forming an aluminum layer on the gate insulating layer 13 and on the field insulating
3
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