Appeal No. 1998-1615 Application 08/548,928 Discussion The claims on appeal are directed to a method for producing a silicon doping test structure. Claim 1 recites an improvement in a method for making a silicon doping test structure having at least one contact which comprises the step of providing a patterned overlayer of a laser light reflective material having holes in alignment with the contact and with regions of the silicon to be doped. The processes of claims 8 and 17 include the steps of providing an undoped silicon device having at least one contact, depositing an oxide layer on the silicon device, depositing a laser light reflective material overlayer on the oxide layer, and patterning the overlayer to form openings in at least the underlying silicon regions to be doped. According to appellant, the silicon doping test structure monitors uniformity during silicon doping, provides means for determining uniformity of both junction depth and impurity dose in a silicon wafer, and enables measurement, in real time, of the active impurity dose and junction depth of doped junctions. See Specification, p. 2. Sasaki discloses a method for producing a MOS FET type semiconductor device comprising the following steps (col. 3, line 9-col. 4, line 36; Figures 2 and 3): (1) Oxidizing a silicon semiconductor substrate 11 by a conventional thermal oxidation method using a silicon nitride layer mask to form a field insulating layer 12 of silicon dioxide; (2) Removing the mask and oxidizing the silicon substrate 11 by the conventional thermal oxidation method to form a gate insulating layer 13 of silicon dioxide; (3) Forming an aluminum layer on the gate insulating layer 13 and on the field insulating 3Page: Previous 1 2 3 4 5 6 7 NextLast modified: November 3, 2007