Appeal No. 1998-1615
Application 08/548,928
(c) "patterning the [aluminum] overlayer to open up holes to the at least one contact and to
critical silicon regions to be doped" (claim 17).
In contrast to the claimed invention, the silicon regions of Sasaki have already been doped at the time
the aluminum overlayer is patterned to form interconnection lines 18a, 18b and 18c (Figure 5). See
col. 3, lines 26-31. The teachings of Ishida fail to cure the deficiencies of Sasaki.
For the reasons set forth above, the decision of the examiner is reversed.
REVERSED
JOHN D. SMITH )
Administrative Patent Judge )
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) BOARD OF PATENT
ADRIENE LEPIANE HANLON ) APPEALS
Administrative Patent Judge ) AND
) INTERFERENCES
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CHUNG K. PAK )
Administrative Patent Judge )
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