Appeal No. 1998-3043
Application 08/667,587
The Rejection on Appeal
Claims 7-10, 12-17, and 25-35 stand rejected under 35
U.S.C. § 103(a) as unpatentable over Tanaka and Chen.
The Invention
The claimed invention is directed to a semiconductor
device. Independent claims 25, 29, and 10 are reproduced
below:
25. A semiconductor device comprising a
semiconductor substrate, first and second wells of
first and second conductivity types formed so as to
be adjacent to each other in a surface portion of
said substrate, and a plurality of MOS transistors
formed in at least one of said wells, each of said
transistors having source/drain regions of a
conductivity type opposite to that of said one well,
wherein:
said MOS transistors are electrically isolated
from one another by a field-shield isolation
structure; and
said first and second wells are electrically
isolated from each other by a first field oxide
film.
29. A semiconductor device comprising a
semiconductor substrate and a plurality of wells
formed in a surface portion of said substrate,
wherein:
each of said wells is electrically isolated from
a different one of the wells and from said
semiconductor substrate by a field oxide film, and
elements formed in said wells are electrically
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