Appeal No. 1998-3043
Application 08/667,587
a first connection conductor formed over said
main surface of said semiconductor substrate for
electrically connecting a first circuit element in
said first semiconductor region and a second circuit
element in said second semiconductor region, said
first connection conductor being in contact with and
extending on said first field oxide film to cross
over said first junction between said first and
second semiconductor regions, and a second
connection conductor formed over said main surface
of said semiconductor substrate for electrically
connecting a third circuit element in said third
semiconductor region and a fourth circuit element in
said fourth semiconductor region, said second
connection conductor being in contact with and
extending on said third field oxide film to cross
over said fourth junction between said third and
fourth semiconductor regions.
Opinion
The rejection of claims 7-10, 12-17, and 25-35 is
reversed.
A reversal of the rejection on appeal should not be construed
as an affirmative indication that the appellant’s claims are
patentable over prior art. We address only the positions and
rationale as set forth by the examiner and on which the
examiner’s rejection of the claims on appeal is based.
According to the appellants (Br. at 6), all of the claims
on appeal require that semiconductor regions formed in the
semiconductor substrate are isolated from each other and from
the substrate by a field oxide film, while circuit elements
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