Appeal No. 1998-3043
Application 08/667,587
isolated from one another by a field-shield
isolation structure.
10. A semiconductor device comprising:
a semiconductor substrate having a main surface;
first, second and third field oxide films formed
in said main surface of said semiconductor
substrate, each of said field oxide films having an
inner surface located within said semiconductor
substrate;
first and second semiconductor regions defined
in said semiconductor substrate, said first and
second semiconductor regions having first and second
conductivity types, respectively, and being arranged
to form a first junction therebetween, said first
junction terminating at said inner surface of said
first field oxide film, whereby said first and
second semiconductor regions are isolated from each
other;
a third semiconductor region having the second
conductivity type and being defined in said
semiconductor substrate to be spaced from said
second semiconductor region, said second and third
semiconductor regions forming second and third
junctions with said semiconductor substrate,
respectively, said second and third junctions
terminating at said inner surface of said second
field oxide film, whereby said second and third
semiconductor regions are isolated from each other;
a fourth semiconductor region having the first
conductivity type and being defined in said third
semiconductor region to form a fourth junction
therewith, said fourth junction terminating at said
inner surface of said third field oxide film,
whereby said fourth semiconductor region is isolated
from said third semiconductor region; and
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