Appeal No. 1998-0088
Application 08/622,327
withdrew that ground of rejection only with respect to claims 7 and 8
(Answer at 1). As a result, the failure of the Answer to repeat that
ground of rejection with respect to claims 15 and 16 or to address
appellants' arguments directed thereto appears to have been an
oversight on the examiner's part, which the examiner is invited to
correct on remand in a Second Supplemental Examiner's Answer.
Accordingly, this application is remanded to the examiner to correct
this apparent oversight.
B. The invention
Appellants' application discloses a number of embodiments of
nonvolatile semiconductor memory devices employing transistors having
nitrided oxide films. The Figure 1 embodiment includes two types of
such films. Film 22, referred to as a nitrided oxide (NO) film,
contains nitrogen at a content not less than 2.5x1020/cm3 and hydrogen
at a content of 3x1020/cm3 or more (Spec. at 18, ll. 10-13). Film 22
overlies the channel hot electron (hole) carrier injection region 20
in order to increase the injection efficiency of the channel hot
electrons (Spec. at 18, ll. 15-17 and at 19, ll. 13-16). This
improves the writing efficiency without increasing the drain and gate
4
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