Appeal No. 1998-0088
Application 08/622,327
film (12 in Figure 1).6 Consequently, claim 15 reads on the "eighth"
embodiment shown in Figure 44, which includes a silicon oxide film 2d
that is located between and in direct contact with RNO films 12d.
D. The reference and rejections
The only rejections argued in the answer are based on the
following reference:
Fujii et al. (Fujii) 5,063,423 Nov. 5, 1991
Claims 15 and 16 stand rejected under § 102 as anticipated by
Fujii and, alternatively, under § 103 for obviousness over Fujii.
E. The merits of the rejections
The examiner contends that claims 15 and 16 are anticipated by
the semiconductor device shown in Fujii's Figures 1A-1G.
Specifically, in the Final Office action7 the examiner reads the
claimed nitrided oxide film on tunneling layer 14, which the examiner
describes as located over drain region 13 and continuous with the
silicon dioxide layer 17. The examiner further contends that the
claimed nitrogen content is shown in Figures 12A-12C and that the
6 Claim 15 does not also require a nitrided oxide of the NO
type.
7 Paper No. 17.
7
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 Next
Last modified: November 3, 2007