Appeal No. 1998-0088
Application 08/622,327
a single transistor comprising:
a source region and a drain region formed on said main
surface of said semiconductor substrate with a predetermined
space between each other and are located at opposite sides of a
channel region;
a nitrided oxide film formed at least at a drain
avalanche hot carrier injection region on said main
surface of said semiconductor substrate, and containing
nitrogen at a content not less than 2.5x1020/cm3 and
hydrogen at a content less than 3x1020/cm3;
a gate electrode formed on said channel region; and
a silicon oxide film formed on said channel region
continuous to said nitrided oxide film.
In view of the way the term "continuous to" is used in the
specification (see page 18, lines 5-7, page 25, lines 15-17, page 35,
lines 22-24, page 40, lines 8-10, page 41, lines 4-5, and page 41,
lines 3-4), that term is understood to mean "in direct contact with."
Claim 15 recites a silicon oxide formed on the channel region
continuous to a nitrided oxide film having a nitrogen content not
less than 2.5x1020/cm3 and a hydrogen content less than 3x1020/cm3),
which as noted above is referred to in the specification as an RNO
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