Appeal No. 1998-1578
Application No. 08/543,827
28, which are all the claims pending in the subject
application.
Claims 1 and 14 are illustrative of the claims on appeal
and are reproduced below:
1. A method of making an integrated circuit
capacitor, said method comprising the steps of:
forming a metal nitride barrier layer having a
thickness;
annealing said metal nitride barrier layer in a
barrier anneal step having a maximum temperature
derived as a function of said thickness, said
function including any value within a range one-
hundred degrees greater than a line defined by the
points (700EC, 1000 D) and (800EC, 3000 D), said
maximum temperature being at least 675EC;
then, after said above steps, forming a first
electrode; thereafter
forming a dielectric layer on said first
electrode; and thereafter
forming a second electrode on said dielectric
layer.
14. A method of making an integrated circuit
capacitor, said method comprising the steps of:
forming a layer of titanium;
forming a layer of titanium nitride on said
layer of titanium;
annealing said titanium and titanium nitride
layers in a barrier anneal step having a maximum
temperature derived as a function of said thickness,
said function including any value within a range
one-hundred degrees greater than a line defined by
the points (700EC, 1000 D) and (800EC, 3000 D), said
maximum temperature being at least 675EC;
then, after said above steps, forming a first
electrode; thereafter
2
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