Appeal No. 1998-1669
Application No. 08/508,563
the step in which sputtering occurs (i.e., the step in which
argon is introduced). (Examiner’s answer, page 4.) Further,
the examiner refers to the teaching in JP ‘746 that oxygen
atoms are supplied from the oxide target during the sputtering
step. (Id.; page 6 of JP ‘746.)
The appellant, on the other hand, argues that the
sputtering step of JP ‘746 is not conducted “in an atmosphere
with a controlled partial pressure of oxygen” as recited in
appealed claim 1. (Reply brief, page 3.)
Additionally, we observe that Mueller describes a method
for manufacturing transparent, conductive indium-tin oxide
layers. (Column 1, lines 8-9.) As a preferred embodiment,
Mueller teaches that the coating process is conducted at an
oxygen
partial pressure of about 10 to 10 mbar (7.5 x 10 to 7.5 x-4 -2 -5
10 Torr) until about one-third of the desired film thickness-3 3
is achieved, the coating is continued at an oxygen partial
pressure of less than 10 mbar (7.5 x 10 Torr) until another-5 -6
one-third of the desired film thickness is deposited, and then
3According to the appellant, 1 mbar equals 0.75 Torr.
(Appeal brief, p. 4.)
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