Appeal No. 1998-2620
Application No. 08/512,033
APPENDIX
1. A method for performing Low Pressure Chemical
Vapor
Deposition onto a substrate, comprising the sequential
steps of:
providing a heated reaction chamber, including a
source of reactive gases and a pumping system controlled
through a gate valve;
providing an end plate for sealing said reaction
chamber;
providing an openable bypass vent for said gate
valve;
opening said bypass vent, thereby causing air to
flow from the reaction chamber to the pumping system;
inserting the substrate into said chamber;
closing the bypass vent;
then sealing said reaction chamber with said end
plate;
opening said gate valve, thereby causing said
chamber to be evacuated;
admitting said reactive gas to the chamber,
thereby causing the reaction products of the
decomposition of said reactive gas to deposit as a layer
on said substrate;
heating the section of the pumping system that
is closest to the reaction chamber;
terminating the admission of the reactive gas;
A1
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