Appeal No. 1998-2916
Application No. 08/606,975
filled with an
electrically conductive material after an adhesion layer, and
a
barrier layer in contact with the adhesion layer, are formed
in
the contact hole. The adhesion layer is formed by reducing,
with H , a gas of a halogenated product of a group IVB
2
element, at a flow ratio of 0.4 or greater of group IVB
element to H , in an ECR plasma CVD process. Appellant
2
asserts at page 4 of the specification that the selection of a
flow ratio of 0.4 or greater of group IVB element to H in the
2
formation of the adhesion layer reduces grain growth of the
group IVB metal, thereby improving the eventual performance of
the conductive material.
Representative claim 1 is reproduced as follows:
1. A method of producing a semiconductor device
having a contact hole in a layer on a substrate of
the device, comprising the steps of:
forming an insulating layer on a semiconductor
substrate;
forming a contact hole in the insulating layer
to expose a selected portion of the semiconductor
2
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