Appeal No. 1998-2916
Application No. 08/606,975
substrate, the contact hole being defined by walls
of the insulating layer;
forming an adhesion layer of a metal element
selected from the group consisting of Ti, Zr, and Hf
in the contact hole to be in contact with the
exposed substrate, the adhesion layer being formed
by reducing, with H , a gas of a halogenated product
2
of the metal element in an ECR plasma CVD process,
the gas of a halogenated product of the metal
element and H being used at a (gas of said
2
halogenated product)/H flow ratio equal to or
2
greater than 0.4;
forming a barrier layer in contact with the
adhesion layer, said adhesion layer and barrier
layer being formed in successive steps in a chamber;
and
filling the contact hole with an electrically
conductive material.
The Examiner relies on the following prior art:
Shankar et al. (Shankar) 4,782,380
Nov. 01, 1988
Yokoyama et al. (Yokoyama) 4,897,709 Jan. 30,
1990
Dixit et al. (Dixit) 4,960,732 Oct. 02,
1990
Sandhu et al. (Sandhu) 5,173,327 Dec. 22,
1992
Akahori et al. (Akahori ‘404) 5,296,404 Mar.
22, 1994
Akahori (Akahori ‘066) 5,508,066 Apr. 16,
1996
(filed Sep. 14,
1994)
M. A. Nicolet (Nicolet) “Diffusion Barriers in Thin Films,”
3
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