Appeal No. 1998-2924
Application NO. 08/276,290
Appellants' claimed methodology includes neither diffusion
nor implantation.
Furthermore, we find that Sagara teaches the claim
limitation "forming an emitter region . . . such that said
emitter region has a second doping greater than that of said
first source and drain regions . . . .” Sagara discloses the
greater doping concentration limitation at column 4, lines 33-
37:
Next an opening is formed in part of the silicon
dioxide film, and an n+ -type polycrystalline
silicon film which contains a high concentration of
impurity is formed therein, followed by heat
treatment at 900° C to form an n+ type emitter.
(emphasis added).
Sagara additionally discloses at column 4, lines 60-62,
that Figure 8 illustrates "a sectional structure of a BiCMOS
formed according to the present invention and having LDD
(lightly doped drain) type MOS transistors" to support the
argument that Sagara teaches Appellants' claimed limitation of
an emitter region having a second doping greater than that of
said first source and drain regions.
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