Appeal No. 1998-2924
Application NO. 08/276,290
region, said first source and drain regions having a first
doping and a second depth from said first surface, less than
said first depth; and
(d) forming an emitter region of said first conductivity
type of a bipolar transistor structure in said second well
region, said second well region forming the base region of
said bipolar transistor structure and said substrate forming
the collector region of said bipolar transistor structure,
such that said emitter region has a second doping greater than
that of said first source and drain regions, and a third depth
from said first surface deeper than said second depth of said
first source and drain regions said first MOS structure.
In rejecting Appellants' claims, the Examiner relies on
Appellants' admitted prior art in Appellants' Specification
and Figure 1 and the following two other listed references:
Sagara et al. (Sagara) 5,118,633 Jun. 2,
1992
Tanabe et al. (Tanabe) EP 0,320,273
Jun. 14, 1989
(European Patent Application)
Claims 3-29, 31 and 32 stand rejected under 35 U.S.C. §
103 as being obvious over the combination of Appellants'
admitted prior art and Tanabe et al. ("Tanabe") and Sagara et
al. ("Sagara"). Rather than repeat the arguments of
Appellants and Examiner, we refer the reader to the
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