Appeal No. 1998-2924
Application NO. 08/276,290
deeper than said second depth of said first source and drain
regions [of] said first MOS structure." We base our finding
on the following passage citations from Sagara: Sagara, at
column 2, lines 30-35 discloses that “. . . source and drain
regions of MOS transistors are formed after the formation of
an emitter of a bipolar transistor, whereby a BiCMOS having
the characteristic of xj(MOS)# xjE(Bip)# 0.15 µm can be formed
easily.” Additionally, Sagara, at column 3, lines 24-28
discloses, "Moreover, by satisfying the relation xj(MOS)#
xjE(Bip)# 0.15 µm, it is possible to form an extremely fine
MOS transistor and a high-performance bipolar transistor at a
time." Finally, at column 3, line 44, Sagara discloses ". . .
by satisfying the relation xj(MOS)# xjE(Bip)# 0.15 µm,
attenuation and the improvement of integration density can be
realized while maintaining xjE(Bip) to 0.15 µm or less.
Appellants argue that Sagara "does not implant the
emitter region, but rather out diffuses it from a doped
surface polycrystalline silicon layer." Brief, page 33. But
this argument is neither persuasive nor dispositive here where
10
Page: Previous 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Next
Last modified: November 3, 2007