Appeal No. 1998-2925
Application 08/532,861
implanting indium into the source and drain regions to a
concentration peak density at a third depth relative to the
upper surface of said substrate; and
implanting p-type dopant into the conductive gate via the
exposed surface to a concentration peak density at a second
depth relative to the upper surface of said conductive gate
wherein the second depth is shallower than said first depth.
THE REFERENCES
Mitsui et al. (Mitsui) 5,296,401 Mar. 22,
1994
Yoshizumi et al. (Yoshizumi) 5,328,864 Jul. 12,
1994
C-M. Lin et al. (Lin), “Sub-100-nm p -n shallow junctions+
fabricated by group III dual ion implantation and rapid
thermal annealing”, 54 Appl. Phys. Lett. 1790-92 (1989).
THE REJECTIONS
Claims 1-7, 11 and 13-18 stand rejected under 35 U.S.C.
§ 103 over Yoshizumi or Mitsui, in view of Lin.
OPINION
We reverse the rejections of claims 1-7 and affirm the
rejections of claims 11 and 13-18. We denominate the
affirmances as involving new grounds of rejection under 37 CFR
§ 1.196(b).
Appellants state that the claims stand or fall in two
groups: 1) claims 1-7, and 2) claims 11 and 13-18 (brief,
3
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