Appeal No. 1998-2938
Application 08/510,752
The rejection
The Examiner concludes (FR3):
[I]t would have been obvious to use a GaAs/InGaAs system
as disclosed in Zucker for the GaAs/AlGaAs system used in
Ishikawa et al. because as taught in Zucker the two are
equally interchangeable. In view of the modification,
the quantum well layer would have a non-uniform lattice
constant with accompanying strain profile and zero filed
[sic, field] E1-LH1 and E1-HH1 transitions that are
substantially degenerate.
Analysis
The two issues are whether the combination of Ishikawa
and Zucker teaches or suggests (1) a quantum well substructure
that "has a non-uniform composition that provides, across the
thickness of the layer, a non-uniform value of lattice
constant to produce a strain profile," and (2) a quantum well
layer where the strain profile has the property of
"substantially matching E1-HH1 and E1-LH1 Stark shifts for at
least one polarity of applied electric field from 0 up to 100
kV/cm and zero field E1-LH1 and E1-HH1 transitions that are
substantially degenerate."
(1)
Appellants argue that neither Ishikawa nor Zucker
discloses a non-uniform lattice constant and, therefore, the
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