Appeal No. 1998-2966
Application 08/605,566
BACKGROUND
The disclosed invention addresses a problem which occurs in
prior art non-volatile semiconductor memory devices as shown in
figures 7 and 8. An impurity ion 16 invading from a defective
portion of passivation film 12 moves in interconnection layer 11
or an interface between interconnection layer 11 and interlayer
insulating film 9 and might penetrate underlying insulating
film 8 and side wall 17 to reach floating gate electrode 5
(specification, p. 5, lines 20-25). These impurity ions may
cancel the electric charge of the electrons stored in the
floating gate electrode 5 and, in an extreme case, data stored in
the non-volatile memory cell is inverted, leading to
defectiveness of the cell (specification, p. 2, lines 16-25).
The disclosed invention provides an impurity introduction
conductive layer between the interconnection layer 11 and the
interlayer insulating film 9, which traps the invading impurity
ion as illustrated in figure 1.
Claim 1, the sole independent claim, is reproduced below.
1. A non-volatile semiconductor memory device,
comprising:
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