Appeal No. 1998-2966
Application 08/605,566
a control electrode formed on said electric charge
storage electrode with an interelectrode insulating film
interposed therebetween;
an underlying insulating film with no impurity
introduced formed so as to cover a surface of said
semiconductor region, said electric charge storage
electrode, and said control electrode;
an interlayer insulating layer having a contact hole
exposing a surface of one of said pair of impurity regions
and formed so as to cover said underlying insulating film;
an impurity introduction conductive layer of the second
conductivity type formed in said contact hole so as to cover
said underlying insulating film exposed to an inner surface
of said contact hole; and
an interconnection layer electrically connected to said
impurity regions in said contact hole.
The Examiner relies on the admitted prior art (APA) at
figures 7 and 8 and the related discussion, and on the following
prior art:
Higuchi 5,466,971 November 14, 1995
(filed October 31, 1994)
Kobayashi 5,500,816 March 19, 1996
(filed February 28, 1994)
Claims 1-4 stand rejected under 35 U.S.C. § 103(a) as being
unpatentable over Kobayashi or the APA in view of Higuchi.
We refer to the final rejection (Paper No. 10) and the
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