Appeal No. 1999-0542
Application 08/760,557
metalization.
Representative claim 42 is reproduced as follows:
42. Method for manufacturing a semiconductor device
having multi-layer metalization, comprising:
a) providing an aluminum alloy layer; and
b) preventing a formation of a layer having a high
resistance while, in a vacuum chamber, successively and
without intervening interruption,
(i) forming a metal layer on and in direct contact
with the aluminum alloy layer, and
(ii) forming a metal nitride layer on and in
direct contact with the metal layer, the aluminum alloy layer
and the metal nitride layer being conductively coupled
together, whereby the metalization continues to conduct even
if the aluminum alloy layer becomes non-conducting.
The examiner relies on the following references:
Yorikane et al. (Yorikane) 4,556,897 Dec. 03, 1985
Watanabe et al. (Watanabe) 4,816,424 Mar. 28, 1989
Us et al. (Us) 4,824,803 Apr. 25, 1989
Bost et al. (Bost) 5,231,053 July 27, 1993
Ishii et al. (Ishii) 5,313,100 May 17, 1994
(filed Apr. 20,
1992)
Kikkawa 5,345,108 Sep. 06, 1994
(filed Feb. 25,
1992)
Ong 5,371,042 Dec. 06, 1994
(filed June 16,
-2-
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