Appeal No. 1999-2571
Application No. 08/820,200
1. A method of making a semiconductor device using an SOI
starting wafer and thinning the same, comprising the steps of:
a) receiving the SOI starting wafer, where the SOI
starting wafer includes a silicon substrate and an oxide layer
thereon;
b) selecting a semiconductor fabrication process for
fabricating the semiconductor device from a group of
semiconductor fabrication processes consisting of CMOS, NMOS,
PMOS, Bipolar, and BICMOS;
c) forming a layer of device quality silicon on the oxide
layer of the SOI starting wafer to a sufficient thickness and
doping profile to realize the semiconductor device;
d) fabricating the semiconductor device in the device
quality silicon layer using the semiconductor fabrication
process selected;
e) forming a support layer on the device quality silicon
layer having the semiconductor device fabricated therein; and
f) thinning the result of step (e).
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Sharma et al. (Sharma) 5,344,524 Sep. 06,
1994
McCarthy 5,674,758 Oct. 07,
1997
(filed Jun. 06, 1995)
2
Page: Previous 1 2 3 4 5 6 7 Next
Last modified: November 3, 2007