Appeal No. 2000-0037
Application 08/627,631
THE INVENTION
The appealed subject matter is directed to a method for
forming a dielectric film on a substrate. According to
appellants, the claimed method is useful in the fabrication of
semiconductor devices. Appellants allege that compared to
conventional prior art methods, the claimed method achieves
higher deposition rates and less downstream apparatus
contamination than prior art methods. Additionally, appellants
allege that the dielectric layers which are laid down have
improved film uniformity, superior gap fill/reflow capability and
smoother surface morphology than dielectric layers prepared by
the prior art methodology.
Claims 1, 14 and 25, appellants' only independent claims,
are believed to be adequately representative of the appealed
subject matter and are reproduced below for a more facile
understanding of the claimed invention.
1. A method for forming a dielectric film on a substrate
wherein said method produces less contamination in a
substrate processing system than is formed under
substantially identical processing conditions with a
nitrogen carrier gas, said method comprising the steps of:
flowing a process gas containing silicon, oxygen, and first
dopant atoms into the chamber to form the dielectric film at
substantially said identical processing condition;
using helium as the carrier gas for at least a portion of
said process gas in the system; and
2
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